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Nanomagnetism and Spintronics

The "Nanomagnetism and Spintronics" group is internationally renowned in the area of growth and characterization of magnetic nanostructures and spintronic devices. Its research focuses on the effect of intrinsic properties and external stimulus on magnetic properties. The study of magnetization manipulation using applied field, polarized current, heat, starin, electric field and polarized light is developed. Magnetic configurations and their dynamics are studied for different temperature, length and time scales.

In those fields, the group has made significant contributions to:

  • Spintronic devices by fundamental study of model system such as fully epitaxial Fe/MgO/Fe Magnetic Tunnel Junction (MTJ)

  • Magnetization Manipulation for instance, using spin polarized current via spin transfer torque or by ultra-short polarized laser pulse (see right figure below)

  • Magneto-resistance devices using spintronic sensors for applications

  • Material growth at the atomic scale by Molecular Beam Epitaxy (MBE) or Physical Vapor Deposition (PVD) of new magnetic material

  • Characterization of magnetic configuration at the nanometer-scale (see left figure below)

The group works in close collaboration with several Competence Centers (CC) of IJL. For instance, Material growth and characterization at the atomic scale and under Ultra-High Vacuum are developed in the CC-Daµm. Patterning of thin film and fabrication of devices at the nanometer and micrometer scales are made in the CC-Minalor. Measurements of the magnetic properties for different temperatures, lengths and time scales are performed in the CC-Magnetism.

The "Nanomagnetism and Spintronics" group is currently based in the premises of the Science and Technology Faculty in Vandœuvre-lès-Nancy. 

The group has 15 permanent staff members (6 CNRS researchers and 9 university lecturers) and 12 non-permanent membres (PhD students and post-doctoral fellows)

Group Leader: Stéphane MANGIN

Link to the team website



Left figure : observation of 360° domain wall in the soft layer of magnetic tunnel junctions using high spatial resolution X-ray photo-emission electron microscopy technique 

Right figure : all Optical Helicity dependent magnetization switching using femto-second pulse laser. The logo of the institute IJL could be written on a 20nm TbCo alloys   (see vidéo)