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Publications: Articles

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References par page: Mots clefs Voir les resumes



Srour, W., Tejeda, A., Stoffel, M., Abuin, M., Fagot-Revurat, Y., Le Fèvre, P., Taleb-Ibrahimi, A. and Malterre, D.
ISSN: 0368-2048

Equipe: Département P2M : Surfaces et Spectroscopies

Djaziri, S., Renault, P.-O., Le Bourhis, E., Goudeau, Ph., Faurie, D., Geandier, G., Mocuta, C. and Thiaudière, D.
Journal of Applied Physics, 116:093504

Equipe: Département SI2M : Microstructures et Contraintes

ZHOU, T., COLIN, M., CANDOLFI, C., Boulanger, C., DAUSCHER, A., Santava, E., HEJTMANEK, J., BARANEK, P., AL RAHAL AL ORABI, R., POTEL, M., Fontaine, B., GOUGEON, P., Gautier, R. and LENOIR, B.
Chemistry of Materials, 26(16):4765-4775

Resume: We present a detailed study of the evolution of the electrical, galvanomagnetic, and thermodynamic properties of polycrystalline AgxMo9Se11 compounds for 3.4 ? x ? 3.8 at low temperatures (2?350 K). In agreement with density functional theory calculations, the collected data show an overall gradual variation in the transport properties from metallic to semiconducting behavior on going from x = 3.4 to 3.8. The results evidence subtle variations in the electronic properties with the Ag content, typified by both positive and negative phonon-drag effects together with thermopower and Hall coefficient of opposite signs. Analysis of the data suggests that these features may be due to peculiarities of the dispersion of the valence bands in the vicinity of the chemical potential. A drastic influence of the Ag content on the thermal transport was evidenced by a pronounced change in the temperature dependence of the specific heat below 10 K. Nonlinearities in the Cp(T3) data are correlated to the concentration of Ag atoms, with an increase in x resulting in a more pronounced departure from a Debye law. The observed behavior mirrors that of ionic conductors, suggesting that AgxMo9Se11 for x ? 3.6 might belong to this class of compounds.

Equipe: Département CP2S : Chimie et électrochimie des matériaux

Liu, H., Bedau, D., Sun, J.Z., Mangin, S., Fullerton, E.E., Katine, J.A. and Kent, A.D.
Journal of Magnetism and Magnetic Materials, 358-359:233-258

Equipe: Département P2M : Nanomagnétisme et Electronique de Spin

Szymczak, Jonathan, Legeai, Sophie, Michel, Stéphanie, Diliberto, Sébastien, Stein, Nicolas and Boulanger, Clotilde
Electrochimica Acta, 137(0):586-594

Mots clefs: Bismuth telluride Ionic liquid Electrodeposition Thermoelectricity

Resume: Abstract In this paper, we report the electrodeposition of stoichiometric Bi2Te3 compound using an ionic liquid binary mixture: 1-ethyl-1-octyl-piperidinium bis(trifluoromethylsulfonyl)imide: 1-ethyl-1-octyl-piperidinium bromide (EOPipTFSI:EOPipBr 95:5 (mol%)). The use of this mixture allows to reach a higher solubility of Bi(III) and Te(IV) precursors compared to pure EOPipTFSI ionic liquid in which Te(IV) salts are not soluble. Moreover, this electrolyte presents an extended cathodic stability, allowing the study of electrochemical processes that occur at high cathodic potential values. A detailed voltammetric study of electrochemical systems was performed for electrolytes containing different [Bi(III)]/[Te(IV)] ratio, allowing the attribution of cathodic signals to electrochemical processes. Experimental conditions leading to the deposition of stoichiometric Bi2Te3 were then determined by varying deposition potential and electrolyte composition, using potentiostatic experiments followed by XRD and SEM-EDX analysis. By varying the concentration of precursors in the electrolyte, mirror-like coatings, adherent and homogeneous, were obtained. Electroplated Bi2Te3 presents n-type conductivity with a Seebeck coefficient equal to ?70 ?V K?1 and an electrical resistivity of 133 ?? m.

Equipe: Département CP2S : Chimie et électrochimie des matériaux

Mangin, S., Gottwald, M., Lambert, C.-H., Steil, D., Uhlír, V., Pang, L., Hehn, M., Alebrand, S., Cinchetti, M., Malinowski, G., Fainman, Y., Aeschlimann, M. and Fullerton, E.E.
Nature Materials, 13(3):286-292

Equipe: Département P2M : Nanomagnétisme et Electronique de Spin

Baringhaus, Jens, Ruan, Ming, Edler, Frederik, Tejeda, Antonio, Sicot, Muriel, Taleb-Ibrahimi, Amina, Li, An-Ping, Jiang, Zhigang, Conrad, Edward H., Berger, Claire, Tegenkamp, Christoph and de Heer, Walt A.
NATURE, 506(7488):349-354
ISSN: 0028-0836

Equipe: Département P2M : Surfaces et Spectroscopies

Kuete Saa, D., Cardoso, R.P., Kosior, F., Altaweel, A., Gries, T., Laminsi, S. and Belmonte, T.
Surface and Coatings Technology, 255:3-7

Equipe: Département CP2S : Expériences et Simulations des Plasmas Réactifs - Interaction plasma-surface et Traitement des Surfaces ESPRITS

Saa, D. Kuete, Cardoso, R. P., Kosior, F., Al Taweel, A., Gries, T., Laminsi, S. and Belmonte, T.
SURFACE & COATINGS TECHNOLOGY, 255:3-7 Belmonte, T (Reprint Author), Univ Lorraine, Inst Jean Lamour, UMR CNRS 7198, F-54042 Nancy, France. Saa, D. Kuete; Kosior, F.; Al Taweel, A.; Gries, T.; Belmonte, T., Univ Lorraine, Inst Jean Lamour, UMR CNRS 7198, F-54042 Nancy, France. Saa, D. Kuete; Laminsi, S., Univ Yaounde I, Lab Chim Minerale, Yaounde 812, Cameroon. Cardoso, R. P., Univ Fed Parana, BR-81531990 Curitiba, Parana, Brazil. Gries, T.; Belmonte, T., CNRS, Inst Jean Lamour, UMR CNRS 7198, F-54042 Nancy, France.
ISSN: 0257-8972

Mots clefs: RuO2; Nanostructuration; Localized growth; Micro-plasma; Afterglow

Resume: Various ruthenium dioxide nanostructures were grown locally by the oxidation of ruthenium samples with an Ar-O-2 microwave micro-afterglow operated at atmospheric pressure. A special attention was paid to the distribution of the surface temperature of the sample which evolves between 530 K and 820 K. Whatever the treatment time, the temperature and the gas composition set within the studied ranges, a general nanostructure, made of lamellae separated by 20-50 nm, is found. When the temperature rises, localized nano-sea urchins, nanotubes with square sections, nano-needles, and more complex structures are found spread over the surface. Treated surfaces were characterized by different surface diagnostics (SEM, XRD, SIMS, etc.) Finally, a growth mechanism is proposed emphasizing the role of emerging defects and stress on the appearance of localized nanostructures. (C) 2013 Elsevier B.V. All rights reserved.

Equipe: Centre de Compétences : ERMIONE informatique et calcul

Geandier, G., Faurie, D., Renault, P.-O., Thiaudière, D. and Le Bourhis, E.
Journal of Applied Crystallography, 47:181-187

Equipe: Département SI2M : Microstructures et Contraintes

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