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Publications: Articles

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Toutes :: 2007, 2012, 2014
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Tous :: Pagnon, ... , PHAE-NGAM, Philipp, PHILIPPE, ... , Pütterich 
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References

2014

Articles:

Turgut, C., Sinha, G., Mether, L., Lahtinen, J., Nordlund, K., Belmahi, M. and Philipp, P.
Analytical Chemistry, 86:11217-11225
2014

Equipe: Département CP2S : Expériences et Simulations des Plasmas Réactifs - Interaction plasma-surface et Traitement des Surfaces ESPRITS

Jana, A., Briquet, L., WIRTZ, T., Philipp, P. and Henrion, G.
Nuclear Instruments and Methods in Physics Research B: Beam Interactions with Materials and Atoms, 326:341-344
2014

Resume: The deposition of multiple carbon atoms on a crystalline silicon (Si) surface is modelled at 5 eV energy by using molecular dynamics simulations combined with a third generation force field that includes bond breaking and formation. Force field parameters are taken from a previous work. These simulations allow for atomic scale insights into the deposition mechanisms and an easier comparison with experimental observations. The results, including distributions of implantation depth, carbon concentrations, sticking coefficients, radial distribution function, and angular distributions are compared for different incidence angles. Due to the deposition of carbon atoms inside the silicon structure, silicon carbide starts to form. The crystalline structure has been investigated for different conditions to get a better understanding of the damaging and growth mechanisms. It is found that a lot of deformation is accumulated in the area of deposition near to the surface but underneath the surface the silicon has still a more crystalline structure. The variation of the silicon (carbide) structu re slightly depends on the angle of incidence. For the conditions used for these simulations, the sticking probability is always high and varies between 95% and 100%, which can be attributed to the high affinity of carbon for silicon.

Equipe: Département CP2S : Expériences et Simulations des Plasmas Réactifs - Interaction plasma-surface et Traitement des Surfaces ESPRITS

Turgut, C., WIRTZ, T., Belmahi, M. and Philipp, P.
Surface and Interface Analysis, 46:357-359
2014

Equipe: Département CP2S : Expériences et Simulations des Plasmas Réactifs - Interaction plasma-surface et Traitement des Surfaces ESPRITS

2012

Articles:

Briquet, L.G.V., Jana, A, Mether, L., Nordlund, K., Henrion, G., Philipp, P. and WIRTZ, T.
J. Phys. Cond. Mat., 24:395004 (13 pp)
2012

Resume: In this paper a new interatomic potential based on the Kieffer force field and designed to perform molecular dynamics (MD) simulations of carbon eposition on silicon surfaces is implemented. This potential is a third-order reactive force field that includes a dynamic charge transfer and allows for the formation and breaking of bonds. The parameters for Si-C and C-C interactions are optimized using a genetic algorithm. The quality of the potential is tested on its ability to model silicon carbide and diamond physical properties as well as the formation energies of point defects. Furthermore, MD simulations of carbon deposition on reconstructed (100) silicon surfaces are carried out and compared to similar simulations using a Tersoff-like bond order potential. Simulations with both potentials produce similar results showing the ability to extend the use of the Kieffer potential to deposition studies. The investigation reveals the presence of a channelling effect when depositing the carbon at 45 incidence angle. This effect is due to channels running in directions symmetrically equivalent to the (110) direction. The channelling is observed to a lesser extent for carbon atoms with 30 and 60 incidence angles relative to the surface normal. On a pristine silicon surface, sticking coefficients were found to vary between 100 and 73%, depending on deposition conditions.

Equipe: Département CP2S : Expériences et Simulations des Plasmas Réactifs - Interaction plasma-surface et Traitement des Surfaces ESPRITS

2007

Articles:

Philipp, P, Wirtz, T, Migeon, HN and Scherrer, H
International journal of mass spectrometry, 261(2-3):91-99
2007

Equipe: Département CP2S : Matériaux à propriétés thermoélectriques

Philipp, P, Wirtz, T, Migeon, HN and Scherrer, H
International journal of mass spectrometry, 264(1):70-83
2007

Equipe: Département CP2S : Matériaux à propriétés thermoélectriques

Total:
6
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