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References

2014

Articles:

Turgut, C., Sinha, G., Mether, L., Lahtinen, J., Nordlund, K., Belmahi, M. and Philipp, P.
Analytical Chemistry, 86:11217-11225
2014

Equipe: Département CP2S : Expériences et Simulations des Plasmas Réactifs - Interaction plasma-surface et Traitement des Surfaces ESPRITS

Srour, W., Tejeda, A., Stoffel, M., Abuin, M., Fagot-Revurat, Y., Le Fèvre, P., Taleb-Ibrahimi, A. and Malterre, D.
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 195:174-178
2014
ISSN: 0368-2048

Equipe: Département P2M : Surfaces et Spectroscopies

ZHOU, T., COLIN, M., CANDOLFI, C., Boulanger, C., DAUSCHER, A., Santava, E., HEJTMANEK, J., BARANEK, P., AL RAHAL AL ORABI, R., POTEL, M., Fontaine, B., GOUGEON, P., Gautier, R. and LENOIR, B.
Chemistry of Materials, 26(16):4765-4775
2014

Resume: We present a detailed study of the evolution of the electrical, galvanomagnetic, and thermodynamic properties of polycrystalline AgxMo9Se11 compounds for 3.4 ? x ? 3.8 at low temperatures (2?350 K). In agreement with density functional theory calculations, the collected data show an overall gradual variation in the transport properties from metallic to semiconducting behavior on going from x = 3.4 to 3.8. The results evidence subtle variations in the electronic properties with the Ag content, typified by both positive and negative phonon-drag effects together with thermopower and Hall coefficient of opposite signs. Analysis of the data suggests that these features may be due to peculiarities of the dispersion of the valence bands in the vicinity of the chemical potential. A drastic influence of the Ag content on the thermal transport was evidenced by a pronounced change in the temperature dependence of the specific heat below 10 K. Nonlinearities in the Cp(T3) data are correlated to the concentration of Ag atoms, with an increase in x resulting in a more pronounced departure from a Debye law. The observed behavior mirrors that of ionic conductors, suggesting that AgxMo9Se11 for x ? 3.6 might belong to this class of compounds.

Equipe: Département CP2S : Chimie et électrochimie des matériaux

Wang, Y., Ghanbaja, J., SOLDERA, F., Boulet, P., Horwat, D., MUECKLICH, F. and Pierson, J. F.
ACTA MATERIALIA, 76:207-212
2014
ISSN: 1359-6454

Equipe: Centre de Compétences : X-Gamma rayons X et spectroscopie

Schejn, Aleksandra, Balan, Lavinia, Falk, Veronique, Aranda, Lionel, Medjahdi, Ghouti and Schneider, Raphael
CRYSTENGCOMM, 16:4493-4500
2014
ISSN: 1466-8033

Equipe: Centre de Compétences : X-Gamma rayons X et spectroscopie

Sicot, M., Fagot-Revurat, Y., Kierren, B., Vasseur, G. and Malterre, D.
APPLIED PHYSICS LETTERS, 105(19)
2014
ISSN: 0003-6951

Equipe: Département P2M : Surfaces et Spectroscopies

Messaoudi, M., S. Aida, M., Attaf, N., Bezzi, T., Bougdira, J. and Medjahdi, G.
Materials Science in Semiconductor Processing, 17:38-42
2014

Equipe: Département CP2S : Expériences et Simulations des Plasmas Réactifs - Interaction plasma-surface et Traitement des Surfaces ESPRITS

Broch, Laurent, Stein, Nicolas, Zimmer, Alexandre, Battie, Yann and Naciri, Aotmane En
Thin Solid Films, 571, Part 3(0):509-512
2014

Mots clefs: Systematic errors In-situ ellipsometry Electrodeposition Bismuth telluride

Resume: Abstract We describe a spectroscopic ellipsometer in the visible domain (400–800 nm) based on a rotating compensator technology using two detectors. The classical analyzer is replaced by a fixed Rochon birefringent beamsplitter which splits the incidence light wave into two perpendicularly polarized waves, one oriented at + 45° and the other one at ? 45° according to the plane of incidence. Both emergent optical signals are analyzed by two identical CCD detectors which are synchronized by an optical encoder fixed on the shaft of the step-by-step motor of the compensator. The final spectrum is the result of the two averaged ? and ? spectra acquired by both detectors. We show that ? and ? spectra are acquired without systematic errors on a spectral range fixed from 400 to 800 nm. The acquisition time can be adjusted down to 25 ms. The setup was validated by monitoring the first steps of bismuth telluride film electrocrystallization. The results exhibit that induced experimental growth parameters, such as film thickness and volumic fraction of deposited material can be extracted with a better trueness.

Equipe: Département CP2S : Chimie et électrochimie des matériaux

Liu, H., Bedau, D., Sun, J.Z., Mangin, S., Fullerton, E.E., Katine, J.A. and Kent, A.D.
Journal of Magnetism and Magnetic Materials, 358-359:233-258
2014

Equipe: Département P2M : Nanomagnétisme et Electronique de Spin

Szymczak, Jonathan, Legeai, Sophie, Michel, Stéphanie, Diliberto, Sébastien, Stein, Nicolas and Boulanger, Clotilde
Electrochimica Acta, 137(0):586-594
2014

Mots clefs: Bismuth telluride Ionic liquid Electrodeposition Thermoelectricity

Resume: Abstract In this paper, we report the electrodeposition of stoichiometric Bi2Te3 compound using an ionic liquid binary mixture: 1-ethyl-1-octyl-piperidinium bis(trifluoromethylsulfonyl)imide: 1-ethyl-1-octyl-piperidinium bromide (EOPipTFSI:EOPipBr 95:5 (mol%)). The use of this mixture allows to reach a higher solubility of Bi(III) and Te(IV) precursors compared to pure EOPipTFSI ionic liquid in which Te(IV) salts are not soluble. Moreover, this electrolyte presents an extended cathodic stability, allowing the study of electrochemical processes that occur at high cathodic potential values. A detailed voltammetric study of electrochemical systems was performed for electrolytes containing different [Bi(III)]/[Te(IV)] ratio, allowing the attribution of cathodic signals to electrochemical processes. Experimental conditions leading to the deposition of stoichiometric Bi2Te3 were then determined by varying deposition potential and electrolyte composition, using potentiostatic experiments followed by XRD and SEM-EDX analysis. By varying the concentration of precursors in the electrolyte, mirror-like coatings, adherent and homogeneous, were obtained. Electroplated Bi2Te3 presents n-type conductivity with a Seebeck coefficient equal to ?70 ?V K?1 and an electrical resistivity of 133 ?? m.

Equipe: Département CP2S : Chimie et électrochimie des matériaux

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