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2014

Articles:

Hamdan, A., Noel, C., Ghanbaja, J. and Belmonte, T.
Plasma Chemistry and Plasma Processing, 34:1101-1114
2014

Equipe: Département CP2S : Expériences et Simulations des Plasmas Réactifs - Interaction plasma-surface et Traitement des Surfaces ESPRITS

Kenzari, Samuel, Bonina, David, Dubois, Jean Marie and Fournee, Vincent
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 15(2)
2014
ISSN: 1468-6996

Equipe: Département CP2S : Métallurgie et Surfaces

Kenzari, Samuel, Bonina, David, Dubois, Jean Marie and Fournee, Vincent
Science and Technology of Advanced Materials, 15(2):024802
2014

Equipe: Centre de Compétences : Matériaux et Procédés additifs

ZHOU, T., COLIN, M., CANDOLFI, C., Boulanger, C., DAUSCHER, A., Santava, E., HEJTMANEK, J., BARANEK, P., AL RAHAL AL ORABI, R., POTEL, M., Fontaine, B., GOUGEON, P., Gautier, R. and LENOIR, B.
Chemistry of Materials, 26(16):4765-4775
2014

Resume: We present a detailed study of the evolution of the electrical, galvanomagnetic, and thermodynamic properties of polycrystalline AgxMo9Se11 compounds for 3.4 ? x ? 3.8 at low temperatures (2?350 K). In agreement with density functional theory calculations, the collected data show an overall gradual variation in the transport properties from metallic to semiconducting behavior on going from x = 3.4 to 3.8. The results evidence subtle variations in the electronic properties with the Ag content, typified by both positive and negative phonon-drag effects together with thermopower and Hall coefficient of opposite signs. Analysis of the data suggests that these features may be due to peculiarities of the dispersion of the valence bands in the vicinity of the chemical potential. A drastic influence of the Ag content on the thermal transport was evidenced by a pronounced change in the temperature dependence of the specific heat below 10 K. Nonlinearities in the Cp(T3) data are correlated to the concentration of Ag atoms, with an increase in x resulting in a more pronounced departure from a Debye law. The observed behavior mirrors that of ionic conductors, suggesting that AgxMo9Se11 for x ? 3.6 might belong to this class of compounds.

Equipe: Département CP2S : Chimie et électrochimie des matériaux

Jana, A., Briquet, L., WIRTZ, T., Philipp, P. and Henrion, G.
Nuclear Instruments and Methods in Physics Research B: Beam Interactions with Materials and Atoms, 326:341-344
2014

Resume: The deposition of multiple carbon atoms on a crystalline silicon (Si) surface is modelled at 5 eV energy by using molecular dynamics simulations combined with a third generation force field that includes bond breaking and formation. Force field parameters are taken from a previous work. These simulations allow for atomic scale insights into the deposition mechanisms and an easier comparison with experimental observations. The results, including distributions of implantation depth, carbon concentrations, sticking coefficients, radial distribution function, and angular distributions are compared for different incidence angles. Due to the deposition of carbon atoms inside the silicon structure, silicon carbide starts to form. The crystalline structure has been investigated for different conditions to get a better understanding of the damaging and growth mechanisms. It is found that a lot of deformation is accumulated in the area of deposition near to the surface but underneath the surface the silicon has still a more crystalline structure. The variation of the silicon (carbide) structu re slightly depends on the angle of incidence. For the conditions used for these simulations, the sticking probability is always high and varies between 95% and 100%, which can be attributed to the high affinity of carbon for silicon.

Equipe: Département CP2S : Expériences et Simulations des Plasmas Réactifs - Interaction plasma-surface et Traitement des Surfaces ESPRITS

Altaweel, A., Filipic, G., Gries, T. and Belmonte, T.
Journal of Crystal Growth, 407:17-24
2014

Equipe: Département CP2S : Expériences et Simulations des Plasmas Réactifs - Interaction plasma-surface et Traitement des Surfaces ESPRITS

Wang, Y., Ghanbaja, J., SOLDERA, F., Boulet, P., Horwat, D., MUECKLICH, F. and Pierson, J. F.
ACTA MATERIALIA, 76:207-212
2014
ISSN: 1359-6454

Equipe: Centre de Compétences : X-Gamma rayons X et spectroscopie

Schejn, Aleksandra, Balan, Lavinia, Falk, Veronique, Aranda, Lionel, Medjahdi, Ghouti and Schneider, Raphael
CRYSTENGCOMM, 16:4493-4500
2014
ISSN: 1466-8033

Equipe: Centre de Compétences : X-Gamma rayons X et spectroscopie

Sicot, M., Fagot-Revurat, Y., Kierren, B., Vasseur, G. and Malterre, D.
APPLIED PHYSICS LETTERS, 105(19)
2014
ISSN: 0003-6951

Equipe: Département P2M : Surfaces et Spectroscopies

Bellot, Jean-Pierre, De Felice, Valerio, Dussoubs, Bernard, Jardy, Alain and Hans, Stephane
METALLURGICAL AND MATERIALS TRANSACTIONS B-PROCESS METALLURGY AND MATERIALS PROCESSING SCIENCE, 45(1):13-21
2014
ISSN: 1073-5615

Resume: Gas-stirring ladle treatment of liquid metal has been pointed out for a long time as the processing stage is mainly responsible for the inclusion population of specialty steels. A steel ladle is a complex three-phase reactor, where strongly dispersed inclusions are transported by the turbulent liquid metal/bubbles flow. We have coupled a population balance model with CFD in order to simulate the mechanisms of transport, aggregation, flotation, and surface entrapment of inclusions. The simulation results, when applied to an industrial gas-stirring ladle operation, show the efficiency of this modeling approach and allow us to compare the respective roles of these mechanisms on the inclusion removal rate. The comparison with literature reporting data emphasizes the good prediction of deoxidating rate of the ladle. On parallel, a simplified zero-dimensional model has been set-up incorporating the same kinetics law for the aggregation rate and all the removal mechanisms. A particular attention has been paid on the averaging method of the hydrodynamics parameters introduced in the flotation and kinetics kernels.

Equipe: Centre de Compétences : ERMIONE informatique et calcul

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