This file was created by the TYPO3 extension bib --- Timezone: CEST Creation date: 2020-09-19 Creation time: 10-56-18 --- Number of references 8 article Wegrowe2014 Physical Review B - Condensed Matter and Materials Physics 2014 89 9 Département P2M : Nanomagnétisme et Electronique de Spin http://www.scopus.com/inward/record.url?eid=2-s2.0-84897834175&partnerID=40&md5=b5ecbbf1a3867f2b77a47624b0c93b73 J.-E.Wegrowe H.-J.Drouhin D.Lacour article 201-4341 Nuclear Instruments and Methods in Physics Research B: Beam Interactions with Materials and Atoms 2014 326 341-344 The deposition of multiple carbon atoms on a crystalline silicon (Si) surface is modelled at 5 eV energy by using molecular dynamics simulations combined with a third generation force field that includes bond breaking and formation. Force field parameters are taken from a previous work. These simulations allow for atomic scale insights into the deposition mechanisms and an easier comparison with experimental observations. The results, including distributions of implantation depth, carbon concentrations, sticking coefficients, radial distribution function, and angular distributions are compared for different incidence angles. Due to the deposition of carbon atoms inside the silicon structure, silicon carbide starts to form. The crystalline structure has been investigated for different conditions to get a better understanding of the damaging and growth mechanisms. It is found that a lot of deformation is accumulated in the area of deposition near to the surface but underneath the surface the silicon has still a more crystalline structure. The variation of the silicon (carbide) structu re slightly depends on the angle of incidence. For the conditions used for these simulations, the sticking probability is always high and varies between 95% and 100%, which can be attributed to the high affinity of carbon for silicon. Département CP2S : Expériences et Simulations des Plasmas Réactifs - Interaction plasma-surface et Traitement des Surfaces ESPRITS 10.1016/j.nimb.2013.10.069 A.Jana L.Briquet T.WIRTZ P.Philipp G.Henrion article ISI:000340330400018 ACTA MATERIALIA 2014 76 207-212 Centre de Compétences : X-Gamma rayons X et spectroscopie 1359-6454 10.1016/j.actamat.2014.05.008 Y.Wang J.Ghanbaja F.SOLDERA P.Boulet D.Horwat F.MUECKLICH J. F.Pierson article 201-4446 Surface and Interface Analysis 2014 46 357-359 Département CP2S : Expériences et Simulations des Plasmas Réactifs - Interaction plasma-surface et Traitement des Surfaces ESPRITS 10.1002/sia.5649 C.Turgut T.WIRTZ M.Belmahi P.Philipp article ISI:000341271100006 PHYSICAL REVIEW LETTERS 2014 113 10 Département CP2S : Métallurgie et Surfaces 0031-9007 10.1103/PhysRevLett.113.106101 R. D.DIEHL H. I.Li S. Y.Su A.Mayer N. A.Stanisha J.Ledieu K. R. J.Lovelock Robert G.Jones A.Deyko L. H.Wearing R.McGrath A.Chaudhuri D. P.Woodruff article ISI:000334990600058 ACS NANO 2014 8 4 3646-3653 Département CP2S : Métallurgie et Surfaces 1936-0851 10.1021/nn500234j VincentFournee EmilieGaudry JulianLedieu Marie-Cecilede Weerd DongmeiWu ThomasLograsso article ISI:000340658000004 PHYSICAL REVIEW B 2014 89 24 Département CP2S : Métallurgie et Surfaces 1098-0121 10.1103/PhysRevB.89.245428 HeekeunShin A.Schwarze R. D.DIEHL K.PUSSI A.Colombier E.Gaudry J.Ledieu G. M.McGuirk L. N. SerkovicLoli V.Fournee L. L.Wang G.Schull R.Berndt article Beneteau:2014 Acta Materialia 2014 81 30--40 Département SI2M : Microstructures et Contraintes http://dx.doi.org/10.1016/j.actamat.2014.07.050 Elsevier BV 1359-6454 10.1016/j.actamat.2014.07.050 AdelineBénéteau ElisabethAeby-Gautier GuillaumeGeandier PatrickWeisbecker AbdelkrimRedjaimia BenoitAppolaire