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@Article { ISI:000290719900005,
   title = {Chemical vapour deposition enhanced by atmospheric microwave plasmas: a large-scale industrial process or the next nanomanufacturing tool?},
   journal = {PLASMA SOURCES SCIENCE \& TECHNOLOGY},
   year = {2011},
   volume = {20},
   number = {2},
   abstract = {This paper describes several specific aspects of atmospheric plasma deposition carried out with a microwave resonant cavity. Deposition over a wide substrate is first studied. We show that high deposition rates (several hundreds of mu m h(-1)) are due to localization of fluxes on the substrate by convection when slightly turbulent flows are used. Next, we describe possible routes to localize deposition over a nanometre-sized area. Scaling down atmospheric plasma deposition is possible and two strategies to reach nanometre scales are described. Finally, we study self-organization of SiO(2) nanodots deposited by chemical vapour deposition at atmospheric pressure enhanced by an Ar-O(2) micro-afterglow operating at high temperature (>1200 K). When the film being deposited is thin enough (similar to 500 nm) nanodots are obtained and they can be assembled into threads to create patterned surfaces. When the coating becomes thicker (similar to 1 mu m), and for relatively high content in HMDSO, SiO(2) walls forming hexagonal cells are obtained.},
   note = {Centre de Comp{\'e}tences : ERMIONE informatique et calcul},
   publisher = {IOP PUBLISHING LTD},
   address = {DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND},
   type = {Article; Proceedings Paper},
   language = {English},
   ISSN = {0963-0252},
   DOI = {10.1088/0963-0252/20/2/024004},
   author = {Belmonte, T. and Gries, T. and Cardoso, R. P. and Arnoult, G. and Kosior, F. and Henrion, G.}
}

@Article { ISI:000290187100009,
   title = {High-rate deposition by microwave RPECVD at atmospheric pressure},
   journal = {THIN SOLID FILMS},
   year = {2011},
   volume = {519},
   number = {13},
   pages = {4177-4185},
   abstract = {The post-discharge of a microwave resonant cavity working at atmospheric pressure is used to enhance deposition of SiOx thin films from HMDSO by chemical vapor deposition. Maximum static deposition rates are close to 150 mu m h(-1) for low power consumption per unit of coated width (similar to 100 W/cm). Dynamic deposition rates are close to 3.5 nm ms(-1). The distribution of the coating thickness is heterogeneous over an area of 150 x 90 mm(2). The influence of the main parameters of the process is systematically studied to show how the key reactions, i.e. gas phase synthesis of powders and surface deposition, are correlated. (C) 2011 Elsevier B.V. All rights reserved.},
   note = {Centre de Comp{\'e}tences : ERMIONE informatique et calcul},
   keywords = {Plasma-enhanced chemical vapor deposition; Hexamethyldisiloxane; Microwave assisted chemical vapor deposition; Resonant cavity; Afterglow; Post discharge},
   publisher = {ELSEVIER SCIENCE SA},
   address = {PO BOX 564, 1001 LAUSANNE, SWITZERLAND},
   type = {Article},
   language = {English},
   ISSN = {0040-6090},
   DOI = {10.1016/j.tsf.2011.02.003},
   author = {Cardoso, R. P. and Belmonte, T. and Kosior, F. and Henrion, G. and Tixhon, E.}
}

@Article { ISI:000289512700022,
   title = {On the origin of self-organization of SiO2 nanodots deposited by CVD enhanced by atmospheric pressure remote microplasma},
   journal = {JOURNAL OF PHYSICS D-APPLIED PHYSICS},
   year = {2011},
   volume = {44},
   number = {17},
   abstract = {The origin of organization of nanostructured silica coatings deposited on stainless steel substrates by remote microplasma at atmospheric pressure is investigated. We show by resorting to thermal camera measurements coupled with modelling that deposition, limited to a few seconds in time, occurs at low temperature (similar to below 420 K) although the gas temperature may reach 1400 K. Raman analyses of deposited films with thicknesses below 1 mu m show the presence of oxidized silicon bonded to the metallic surface. The origin of nanodots is explained as follows. Close to the microplasma nozzle, the concentration of oxidizing species and/or the temperature being high enough, a silica thin film is obtained, leading to ceramic-metallic oxide interface that leads to a Volmer-Weber growth mode and to the synthesis of 3D structures over long treatment times. Far from the nozzle, the reactivity decreasing, thin films get a plasma-polymer like behaviour which leads to a Franck-Van der Merwe growth mode and films with a higher density. Other nanostructures, made of hexagonal cells, are observed but remain unexplained.},
   note = {Centre de Comp{\'e}tences : ERMIONE informatique et calcul},
   publisher = {IOP PUBLISHING LTD},
   address = {TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND},
   type = {Article},
   language = {English},
   DOI = {10.1088/0022-3727/44/17/174022},
   author = {Arnoult, G. and Belmonte, T. and Kosior, F. and Dossot, M. and Henrion, G.}
}