linkedintwitter
Annuaire  |  Flux RSS  |  Espace presse  |  Wiki IJL  |  Webmail  |  Videos  |    Photos   Articles scientifiques  Articles scientifiques 

Publications: Articles

Annees:  
Toutes :: 2009, 2011, 2013, 2014
Auteurs:  
Tous :: A, B, C, D, F, G, H, J, K, L, M, N, S, T 
Preferences: 
References par page: Mots clefs Voir les resumes
References

Articles:

Belmonte, T., Gries, T., Cardoso, R. P., Arnoult, G., Kosior, F. and Henrion, G.
PLASMA SOURCES SCIENCE & TECHNOLOGY, 20(2)
2011
ISSN: 0963-0252

Resume: This paper describes several specific aspects of atmospheric plasma deposition carried out with a microwave resonant cavity. Deposition over a wide substrate is first studied. We show that high deposition rates (several hundreds of mu m h(-1)) are due to localization of fluxes on the substrate by convection when slightly turbulent flows are used. Next, we describe possible routes to localize deposition over a nanometre-sized area. Scaling down atmospheric plasma deposition is possible and two strategies to reach nanometre scales are described. Finally, we study self-organization of SiO(2) nanodots deposited by chemical vapour deposition at atmospheric pressure enhanced by an Ar-O(2) micro-afterglow operating at high temperature (>1200 K). When the film being deposited is thin enough (similar to 500 nm) nanodots are obtained and they can be assembled into threads to create patterned surfaces. When the coating becomes thicker (similar to 1 mu m), and for relatively high content in HMDSO, SiO(2) walls forming hexagonal cells are obtained.

Equipe: Centre de Compétences : ERMIONE informatique et calcul

Cardoso, R. P., Belmonte, T., Kosior, F., Henrion, G. and Tixhon, E.
THIN SOLID FILMS, 519(13):4177-4185
2011
ISSN: 0040-6090

Mots clefs: Plasma-enhanced chemical vapor deposition; Hexamethyldisiloxane; Microwave assisted chemical vapor deposition; Resonant cavity; Afterglow; Post discharge

Resume: The post-discharge of a microwave resonant cavity working at atmospheric pressure is used to enhance deposition of SiOx thin films from HMDSO by chemical vapor deposition. Maximum static deposition rates are close to 150 mu m h(-1) for low power consumption per unit of coated width (similar to 100 W/cm). Dynamic deposition rates are close to 3.5 nm ms(-1). The distribution of the coating thickness is heterogeneous over an area of 150 x 90 mm(2). The influence of the main parameters of the process is systematically studied to show how the key reactions, i.e. gas phase synthesis of powders and surface deposition, are correlated. (C) 2011 Elsevier B.V. All rights reserved.

Equipe: Centre de Compétences : ERMIONE informatique et calcul

Cette annee / Total:
2 / 5
Exporter au format:
BibTeX, XML