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Publications: Articles


Titre: High-rate deposition by microwave RPECVD at atmospheric pressure
Auteurs: Cardoso, R. P., Belmonte, T., Kosior, F., Henrion, G. and Tixhon, E.
Work type: <span class="tx_bib-type">Article</span>
Annee: 2011
Volume: 519
olabel_issue: 13
Pages: 4177-4185
Publisher address: PO BOX 564, 1001 LAUSANNE, SWITZERLAND
Keywords: Plasma-enhanced chemical vapor deposition; Hexamethyldisiloxane; Microwave assisted chemical vapor deposition; Resonant cavity; Afterglow; Post discharge
Abstract: The post-discharge of a microwave resonant cavity working at atmospheric pressure is used to enhance deposition of SiOx thin films from HMDSO by chemical vapor deposition. Maximum static deposition rates are close to 150 mu m h(-1) for low power consumption per unit of coated width (similar to 100 W/cm). Dynamic deposition rates are close to 3.5 nm ms(-1). The distribution of the coating thickness is heterogeneous over an area of 150 x 90 mm(2). The influence of the main parameters of the process is systematically studied to show how the key reactions, i.e. gas phase synthesis of powders and surface deposition, are correlated. (C) 2011 Elsevier B.V. All rights reserved.
Equipe: Centre de Compétences : ERMIONE informatique et calcul

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