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Publications: Articles

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References

2014

Articles:

Djaziri, S., Renault, P.-O., Le Bourhis, E., Goudeau, Ph., Faurie, D., Geandier, G., Mocuta, C. and Thiaudière, D.
Journal of Applied Physics, 116:093504
2014

Equipe: Département SI2M : Microstructures et Contraintes

Geandier, G., Faurie, D., Renault, P.-O., Thiaudière, D. and Le Bourhis, E.
Journal of Applied Crystallography, 47:181-187
2014

Equipe: Département SI2M : Microstructures et Contraintes

Faurie, D., Renault, P.-O., Le Bourhis, E., Geandier, G., Goudeau, P. and Thiaudière, D.
Applied Surface Science, 306:70--74
2014
ISSN: 0169-4332

Equipe: Département SI2M : Microstructures et Contraintes

2013

Articles:

Faurie, D., Geandier, G., Renault, P.-O., Le Bourhis, E. and Thiaudière, D.
Thin Solid Films, 530:25-29
2013

Equipe: Département SI2M : Microstructures et Contraintes

Djaziri, S., Faurie, D., Renault, P.-O., Le Bourhis, E., Goudeau, Ph., Geandier, G. and Thiaudière, D.
Acta Materialia, 61:5067--5077
2013

Equipe: Département SI2M : Microstructures et Contraintes

2012

Articles:

Borgese, L., Gelfi, M., Bontempi, E., Goudeau, P., Geandier, G., Thiaudière, D. and Depero, L. E.
Surface and Coatings Technology, 206(8-9):2459-2463
2012
ISSN: 0257-8972

Resume: Atomic Layer Deposition (ALD) allows the deposition of thin films onto flat as well as complex geometry surfaces with excellent conformality. Thicknesses of few atomic layers can be achieved. Moreover, low-temperature deposition is possible and this enables the change of surface properties of many kinds of materials. Good adhesion characteristics and also good mechanical performance of ALD deposited thin films make the technique extremely interesting for several applications, as for example micro-electronics. TiO2 is a well studied semiconductor material because of its multifunctional properties that open a wide range of applications for example in photocatalysis, optics and solar cells. ALD is extremely completive to other technique, to deposit titania thin films, employed even to improve the biocompatibility of many kind of materials. TiO2 thin films are deposited with ALD technique at low temperature (90 degrees C) onto Kapton substrate and then crystallized ex-situ after annealing at 300 degrees C. X-ray diffraction (XRD) techniques are very suitable for the analysis of structure and microstructure of films and surface layers. In this work, XRD in combination with in situ tensile testing has been applied for the first time to measure elastic properties (elastic modulus and Poisson ratio) of TiO2 anatase thin films obtained by ALD. For the experimental conditions, the tensile stage was installed in a Synchrotron laboratory of Soleil. The information extracted from diffraction patterns is presented. (C) 2011 Elsevier B.V. All rights reserved.

Equipe: Département SI2M : Microstructures et Contraintes

2011

Articles:

Borgese, L., Bontempi, E., Gelfi, M., Depero, L. E., Goudeau, P., Geandier, G. and Thiaudière, D.
Acta Materialia, 59(7):2891-2900
2011
ISSN: 1359-6454

Resume: Amorphous TiO2 thin films were deposited by means of atomic layer deposition on Kapton substrates and then crystallized ex situ by annealing at 300 degrees C to obtain the anatase phase. The morphology, structure and microstructure of films treated for 12, 24, 72 and 90 h were investigated. The local Ti coordination changes were studied by X-ray near-edge structure (XANES). On the basis of X-ray diffraction residual stress calculations, the elastic anisotropy of the films is experimentally determined for the first time (A*(comp) = 0.07, A*(shear) = 0.03). The film macro-strains increased with the time of treatment, while the micro-strains decreased. This effect may be correlated with the incipient anatase-to-rutile transformation as suggested by the changes observed in the XANES pattern of the film treated for 90 h. However, the contribution of the substrate cannot be excluded. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Equipe: Département SI2M : Microstructures et Contraintes

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