Articles: | |
---|---|
• |
PHYSICAL REVIEW B,
88(21)
2013
ISSN: 1098-0121
Equipe: Département CP2S : Métallurgie et Surfaces |
• |
PHYSICAL REVIEW B,
88
2013
ISSN: 1098-0121
Equipe: Centre de Compétences : X-Gamma rayons X et spectroscopie |
• |
NATURE COMMUNICATIONS,
4
2013
ISSN: 2041-1723
DOI: 10.1038/ncomms3800
Equipe: Département P2M : Surfaces et Spectroscopies |
• |
JOURNAL OF PHYSICS-CONDENSED MATTER,
25
2013
ISSN: 0953-8984
Equipe: Centre de Compétences : X-Gamma rayons X et spectroscopie |
• |
Journal of Nuclear Materials,
438:S154
2013
Equipe: Département CP2S : Expériences et Simulations des Plasmas Réactifs - Interaction plasma-surface et Traitement des Surfaces ESPRITS |
• |
Journal of Applied Physics,
113:043301
2013
Resume: Modes of energy dissipation in impacts made on various materials (Al, Cu, Fe, and Si) by discharges in heptane are investigated for micro-gap conditions. Bulk metals and thin films of 300 nm in thickness deposited on silicon wafers are used as samples. Positive high voltage pulses with nanosecond rise times make it possible to isolate a single discharge and to study the way the charge delivered by the power supply is transferred to the larger electrode (the sample) in a pin-to-plate configuration. The diameter of the impacts created by the plasma varies linearly versus the charge raised at a power close to 0.5. However, the exact value of the power depends on the material. We also show how the impact morphologies change with the applied charge. At high charges, the diameters of impacts on thin films behave as those made on silicon. At low charges, they behave as the bulk material. Finally, we show that the energy dissipated in impacts is below a few percent. Equipe: Département CP2S : Expériences et Simulations des Plasmas Réactifs - Interaction plasma-surface et Traitement des Surfaces ESPRITS |
• |
JOURNAL OF APPLIED PHYSICS,
113(4)
Belmonte, T (Reprint Author), Univ Lorraine, Inst Jean Lamour, CNRS, UMR 7198, F-54042 Nancy, France. Hamdan, A.; Noel, C.; Kosior, F.; Henrion, G.; Belmonte, T., Univ Lorraine, Inst Jean Lamour, CNRS, UMR 7198, F-54042 Nancy, France. Noel, C.; Kosior, F.; Henrion, G.; Belmonte, T., Inst Jean Lamour, CNRS, UMR 7198, F-54042 Nancy, France.
2013
ISSN: 0021-8979
DOI: 10.1063/1.4780786
Resume: Modes of energy dissipation in impacts made on various materials (Al, Cu, Fe, and Si) by discharges in heptane are investigated for micro-gap conditions. Bulk metals and thin films of 300 nm in thickness deposited on silicon wafers are used as samples. Positive high voltage pulses with nanosecond rise times make it possible to isolate a single discharge and to study the way the charge delivered by the power supply is transferred to the larger electrode (the sample) in a pin-to-plate configuration. The diameter of the impacts created by the plasma varies linearly versus the charge raised at a power close to 0.5. However, the exact value of the power depends on the material. We also show how the impact morphologies change with the applied charge. At high charges, the diameters of impacts on thin films behave as those made on silicon. At low charges, they behave as the bulk material. Finally, we show that the energy dissipated in impacts is below a few percent. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4780786] Equipe: Centre de Compétences : ERMIONE informatique et calcul |
• |
Journal of Applied Physics,
114(1)
2013
Equipe: Centre de Compétences : MiNaLor micro et nanotechnologies |
• |
Influence of Sn content on properties of ZnO:SnO2 thin films deposited by ultrasonic spray pyrolysis
Materials Science in Semiconductor Processing,
16:2021-2027
2013
Equipe: Département CP2S : Expériences et Simulations des Plasmas Réactifs - Interaction plasma-surface et Traitement des Surfaces ESPRITS |
• |
Key Engineering Materials,
554--557:1530--1538
2013
Equipe: Département SI2M : Microstructures et Contraintes |