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Publications: Articles

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References

Articles:

Kozelj, P., Jazbec, S., Vrtnik, S., Jelen, A., Dolinsek, J., Jagodic, M., Jaglicic, Z., Boulet, P., de Weerd, M. C., Ledieu, J., Dubois, J. M. and Fournee, V.
PHYSICAL REVIEW B, 88(21)
2013
ISSN: 1098-0121

Equipe: Département CP2S : Métallurgie et Surfaces

Kozelj, P., Jazbec, S., Vrtnik, S., Jelen, A., Dolinsek, J., Jagodic, M., Jaglicic, Z., Boulet, P., de Weerd, M. C., Ledieu, J., Dubois, J. M. and Fournee, V.
PHYSICAL REVIEW B, 88
2013
ISSN: 1098-0121

Equipe: Centre de Compétences : X-Gamma rayons X et spectroscopie

Soukiassian, Patrick, Wimmer, Erich, Celasco, Edvige, Giallombardo, Claudia, Bonanni, Simon, Vattuone, Luca, Savio, Letizia, Tejeda, Antonio, Silly, Mathieu, D'angelo, Marie, Sirotti, Fausto and Rocca, Mario
NATURE COMMUNICATIONS, 4
2013
ISSN: 2041-1723

Equipe: Département P2M : Surfaces et Spectroscopies

Bartasyte, Ausrine, Plausinaitiene, Valentina, Abrutis, Adulfas, Stanionyte, Sandra, Margueron, Samuel, Boulet, Pascal, Kobata, T., Uesu, Yoshiaki and Gleize, Jerome
JOURNAL OF PHYSICS-CONDENSED MATTER, 25
2013
ISSN: 0953-8984

Equipe: Centre de Compétences : X-Gamma rayons X et spectroscopie

Tamain, P., Bonhomme, G., Brochard, F., Clairet, F., Gunn, J., Hennequin, P., Hornung, G., Vermare, L. and Ghendrih, Ph.
Journal of Nuclear Materials, 438:S154
2013

Equipe: Département CP2S : Expériences et Simulations des Plasmas Réactifs - Interaction plasma-surface et Traitement des Surfaces ESPRITS

Hamdan, A., Audinot, J.-N., Migot-Choux C. Noël, S., Henrion, G. and Belmonte, T.
Journal of Applied Physics, 113:043301
2013

Resume: Modes of energy dissipation in impacts made on various materials (Al, Cu, Fe, and Si) by discharges in heptane are investigated for micro-gap conditions. Bulk metals and thin films of 300 nm in thickness deposited on silicon wafers are used as samples. Positive high voltage pulses with nanosecond rise times make it possible to isolate a single discharge and to study the way the charge delivered by the power supply is transferred to the larger electrode (the sample) in a pin-to-plate configuration. The diameter of the impacts created by the plasma varies linearly versus the charge raised at a power close to 0.5. However, the exact value of the power depends on the material. We also show how the impact morphologies change with the applied charge. At high charges, the diameters of impacts on thin films behave as those made on silicon. At low charges, they behave as the bulk material. Finally, we show that the energy dissipated in impacts is below a few percent.

Equipe: Département CP2S : Expériences et Simulations des Plasmas Réactifs - Interaction plasma-surface et Traitement des Surfaces ESPRITS

Hamdan, A., Noel, C., Kosior, F., Henrion, G. and Belmonte, T.
JOURNAL OF APPLIED PHYSICS, 113(4) Belmonte, T (Reprint Author), Univ Lorraine, Inst Jean Lamour, CNRS, UMR 7198, F-54042 Nancy, France. Hamdan, A.; Noel, C.; Kosior, F.; Henrion, G.; Belmonte, T., Univ Lorraine, Inst Jean Lamour, CNRS, UMR 7198, F-54042 Nancy, France. Noel, C.; Kosior, F.; Henrion, G.; Belmonte, T., Inst Jean Lamour, CNRS, UMR 7198, F-54042 Nancy, France.
2013
ISSN: 0021-8979

Resume: Modes of energy dissipation in impacts made on various materials (Al, Cu, Fe, and Si) by discharges in heptane are investigated for micro-gap conditions. Bulk metals and thin films of 300 nm in thickness deposited on silicon wafers are used as samples. Positive high voltage pulses with nanosecond rise times make it possible to isolate a single discharge and to study the way the charge delivered by the power supply is transferred to the larger electrode (the sample) in a pin-to-plate configuration. The diameter of the impacts created by the plasma varies linearly versus the charge raised at a power close to 0.5. However, the exact value of the power depends on the material. We also show how the impact morphologies change with the applied charge. At high charges, the diameters of impacts on thin films behave as those made on silicon. At low charges, they behave as the bulk material. Finally, we show that the energy dissipated in impacts is below a few percent. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4780786]

Equipe: Centre de Compétences : ERMIONE informatique et calcul

Aubert, T., Bardong, J., Legrani, O., Elmazria, O., Badreddine Assouar, M., Bruckner, G. and Talbi, A.
Journal of Applied Physics, 114(1)
2013

Equipe: Centre de Compétences : MiNaLor micro et nanotechnologies

Ynineb, F., Hafdallah, A., Aida, M.S., Attaf, N., Bougdira, J., Rinnert, H. and Rahmane, S.
Materials Science in Semiconductor Processing, 16:2021-2027
2013

Equipe: Département CP2S : Expériences et Simulations des Plasmas Réactifs - Interaction plasma-surface et Traitement des Surfaces ESPRITS

Devynck, S., Gradeck, M., Bellot, J.P., Denis, S., Maigrat, G., Varlez, M. and Benard, T.
Key Engineering Materials, 554--557:1530--1538
2013

Equipe: Département SI2M : Microstructures et Contraintes

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