Superconducting diode effect

Type d'événement
Seminar
Teruo Ono (Institute for Chemical Research, Kyoto University, Japan / Center for Spintronics Research Network, Kyoto University, Japan / International Center for Synchrotron Radiation Innovation Smart, Tohoku University, Japan)

We found the superconducting diode effect (SDE) in Nb/V/Ta superlattices with a polar structure, which is the ultimate diode effect exhibiting a superconducting state in one direction and a normal state in the other. The SDE can be considered as the nonreciprocity of the critical current for the metal-superconductor transition. We have also found the reverse effect, i.e., the nonreciprocal critical magnetic field under the application of supercurrent. We also found that the polarity of the superconducting diode shows a sign reversal when the magnetic field is increased. Recently, we have succeeded in demonstrating zero-field SDE by introducing ferromagnetic layers into superlattices. The polarity of the SDE is controlled by the magnetization direction of the ferromagnetic layer, leading to the development of novel non-volatile memories and logic circuits with ultra-low power consumption. 

This work was partly supported by JSPS KAKENHI Grant Numbers (18H04225, 18H01178, 18H05227, 20H05665, 20H05159, 21K18145), MEXT Initiative to Establish Next-generation Novel Integrated Circuits Centers (X-NICS) Grant Number JPJ011438, the Cooperative Research Project Program of the Research Institute of Electrical Communication, Tohoku University, and the Collaborative Research Program of the Institute for Chemical Research, Kyoto University.

Séminaire organisé dans le cadre du programme interdisciplinaire MAT-PULSE (Materials and Physics @ Ultimate Scale: Nanotech for a sustainable digital world)

Date
Date de fin
Lieu

IJL R+4 (N° 4-A014)