SIZMO2D (Spin Injection/detection at Zero Magnetic field in spinOptronics devices based on 2D semiconductors)

SIZMO2D will focus on the fabrication and study of spin-optronic devices (Spin Light Emitting Diodes (SpinLEDs) and spin-photodiodes) presenting the ability to convert spin currents into circularly polarized photons and vice-versa. These hybrid systems will use 2D semiconductors based on Transition Metal Dichalcogenide (TMDC) monolayers (MoS2, WSe2, MoTe2 …), possibly encapsulated by hBN, and will take benefit from the long spin relaxation times (at the µs scale) of the charge carriers recently evidenced in these monolayers, when spins are along the out-of plane axis Oz. In order to inject spins with this orientation and work at zero magnetic field, ferromagnetic electrodes presenting Perpendicular Magnetic Anistropy (PMA) on TMDCs will be deposited. These electrodes will be constituted by ferromagnetic metals (FM) as ultrathin CoFeB (or Ni, [Co/Ni](111) multilayers ...) on top of tunnel barriers like MgO or hBN, or will involve magnetic tunnel barriers created by recently discovered 2D magnetic layers as CrBr3, CrI3, or VSe2. The project will be organized in 4 scientific work packages. IJL will focus on the deposition by sputtering of PMA electrodes on TMDCs. Electrodes based on 2D magnetic materials will be fabricated at LPCNO by exfoliation (Van der Waals stacking). Planar p-n junction will be realized by combining flakes of n-and p-doped 2D semiconductors.