MISSION (Magnetoelectric oxides for spin-Orbitronics (Oxydes magnétoélectriques pour la SpinOrbitronique)

The objective of this project is to combine the magneto-electric effect and the spin-orbit torque in heterostructures. The aim is to reduce the power consumption related to applications in magnetization switching, such as MRAM memories.
It is expected that the effective spin-orbiting torque in the Ga2-xFexO3 magneto-electric oxide (ME) would be modified by applying a gate voltage. Due to this ME-based modulation, the spin-Hall-induced reversal of the ferromagnetic layer (FM) magnetization could require the injection of a lower electric current.This study on "metals with strong spin-orbit coupling"/"magneto-electric oxide" interfaces should bring many benefits, from the advancement of fundamental knowledge to applications related to low energy consumption based on spin-orbit effects.